New Y -function based MOSFET parameter extraction method from weak to strong inversion range

Autor: Quentin Rafhay, Antoine Cros, Gerard Ghibaudo, Jean-Baptiste Henry
Přispěvatelé: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)
Rok vydání: 2016
Předmět:
Zdroj: Solid-State Electronics
Solid-State Electronics, 2016, 123, pp.84-88. ⟨10.1016/j.sse.2016.06.004⟩
Solid-State Electronics, Elsevier, 2016, 123, pp.84-88. ⟨10.1016/j.sse.2016.06.004⟩
ISSN: 0038-1101
Popis: International audience; A new Y-function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Yc(=Qi√Cgc)-function and Y(=Id/√gm)-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail.
Databáze: OpenAIRE