On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K
| Autor: | Mert Yıldırım, Şemsettin Altındal, Haziret Durmuş |
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| Přispěvatelé: | Selçuk Üniversitesi, Fen Fakültesi, Fizik Bölümü, Durmuş, Haziret. |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Rhenium/n-GaAs Schottky Materials science Condensed matter physics barrier diodes business.industry Schottky barrier Doping Atmospheric temperature range Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Pulsed laser deposition Semiconductor 0103 physical sciences Electrical and Electronic Engineering business pulsed laser deposition Quantum tunnelling Diode Surface states |
| Popis: | WOS: 000468050800097 AbstarctThis study presents electrical characteristics of n-GaAs based Schottky barrier diodes (SBDs) with Rhenium (Re) rectifier contacts. The electrical characteristics of the Re/n-GaAs SBDs were investigated utilizing the forward bias current-voltage (I-F-V-F) data collected in temperature range of 60-400K. The values of ideality factor (n) and zero-bias barrier height (phi(Bo)) were found as 9.10 and 0.11eV for 60K, and 1.384 and 0.624eV for 400K, respectively, on the basis of thermionic-emission theory. The conventional Richardson plot deviated from linearity at low temperatures and the Richardson constant value (A(*)) was obtained quite lower than the theoretical value for this semiconductor (8.16Acm(-2)K(-2)). nkT/q-kT/q plot shows that the field-emission may be dominant mechanism at low temperatures as a result of tunneling via surface states since the studied n-GaAs's doping concentration is on the order of 10(18) cm(-3), i.e. at high values so leads to tunneling. On the other hand, phi(Bo)-n, phi(Bo)-q/2kT and (n(-1)-1)-q/2kT plots exhibit linearity but this linearity is observed for two temperature regions (60-160K and 180-400K) due the presence of double Gaussian distribution (GD) of the barrier height. Therefore, the standard deviation value was obtained from the plot of phi(Bo)-q/2kT and it was used for modifying the conventional Richardson plot into the modified Richardson plot by which the values of mean barrier height and A(*) were obtained as 0.386eV and 15.55Acm(-2)K(-2) and 0.878eV and 8.35Acm(-2)K(-2) for the low and high temperature regions, respectively. As a result, I-F-V-F-T characteristics of the Re/n-GaAs SBDs were successfully elucidated by double-GD of barrier height. |
| Databáze: | OpenAIRE |
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