Inductively coupled remote plasma-enhanced chemical vapor deposition (rPE-CVD) as a versatile route for the deposition of graphene micro- and nanostructures
Autor: | Michael Foerster, I. Šics, Markos Paradinas, M. G. Cuxart, Alejandro R. Goñi, H. Moreno Fernandez, Eric Pellegrin, Guillaume Sauthier, V. Carlino, Lucia Aballe, Elzbieta Pach |
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Přispěvatelé: | Ministerio de Economía y Competitividad (España) |
Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
Materials science
Inductively coupled RF plasma Micro and nanostructures Nanotechnology 02 engineering and technology Chemical vapor deposition 01 natural sciences law.invention Highly oriented pyrolytic graphite law 0103 physical sciences Remote plasma Remote plasma enhanced chemical vapor depositions General Materials Science Thin film 010306 general physics Graphene oxide paper Polycrystalline nickels Graphene Graphene foam General Chemistry 021001 nanoscience & nanotechnology Orientational effects Chemical vapor depositions (CVD) Crystalline orientations Chemical engineering 0210 nano-technology Graphene nanoribbons |
Zdroj: | Recercat: Dipósit de la Recerca de Catalunya Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona Digital.CSIC. Repositorio Institucional del CSIC instname Recercat. Dipósit de la Recerca de Catalunya |
Popis: | Multiple layers of graphene thin films with micro-crystalline orientation and vertical graphene nano-sheets were grown on different substrates (i.e., polycrystalline nickel foil, Ni(111), highly oriented pyrolytic graphite) using a single-step process based on low-pressure remote Plasma-Enhanced Chemical Vapor Deposition (rPE-CVD). In contrast to previous studies, a novel basic approach to this technique including a new remote inductively coupled RF plasma source has been used to (i) minimize the orientational effect of the plasma electrical fields during the catalyst-free growth of graphene nano-sheets, (ii) warrant for a low graphene defect density via low plasma kinetics, (iii) decouple the dissociation process of the gas from the growth process of graphene on the substrate, (iv) tune the feedstock gas chemistry in view of improving the graphene growth, and (v) reduce the growth temperature as compared to conventional chemical vapor deposition (CVD). In order to study the various aspects of the rPE-CVD graphene growth modes and to assess the characteristics of the resulting graphene layers, Raman spectroscopy, XPS, SEM, and STM were used. The results give evidence for the successful performance of this new rPE-CVD plasma deposition source, that can be combined with in situ UHV-based processess for the production of, e. g., hybrid metal ferromagnet/graphene systems. A. R. G. thanks the Spanish Ministry of Economy and Competitiveness (MINECO) for its support through Grant No. CSD2010-00044 (Consolider NANOTHERM). M. P. thanks MINECO for its financial support through the Spanish PTA2014-09788-I fellowship. The work at ICMAB (Raman measurements) was carried out under the auspices of the Spanish Severo Ochoa Centre of Excellence program (grant SEV-2015-0496). SEM, STM, and XPS measurements were performed at ICN2 that acknowledges support from the Severo Ochoa Program (MINECO, Grant SEV-2013-0295). |
Databáze: | OpenAIRE |
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