InSb∕AlInSb quantum-well light-emitting diodes

Autor:	M. T. Emeny, Aleksey D. Andreev, H. R. Hardaway, Neil Gordon, Louise Buckle, M. K. Haigh, Geoffrey R. Nash, Timothy Ashley, S. J. Smith
Rok vydání:	2006
Předmět:	Materials science Physics and Astronomy (miscellaneous) Physics::Instrumentation and Detectors Condensed Matter::Other business.industry Band gap Electroluminescence law.invention Condensed Matter::Materials Science law Optoelectronics business Quantum well Diode Light-emitting diode
Zdroj:	Applied Physics Letters. 88:051107
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2171647
Popis:	We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1-xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4df66bb0ccb0b07034a36abecb5a533 https://doi.org/10.1063/1.2171647 Zobrazit plný text záznamu