Back-side integration of Hybrid III–V on Silicon DBR lasers
| Autor: | Pierre Brianceau, Jacques-Alexandre Dallery, Christophe Jany, Sebastien Cremer, J. Durel, T. Card, Badhise Ben Bakir, Jean-Emmanuel Broquin, Frederic Boeuf, Loic Sanchez, Karim Hassan, R. Thibon, Bertrand Szelag, V. Larrey, T. Bria, R. Guiavarch |
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| Přispěvatelé: | STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Vistec Electron Beam GmbH, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Silicon on insulator 02 engineering and technology Laser Chip 01 natural sciences law.invention 010309 optics Hybrid III Wavelength 020210 optoelectronics & photonics chemistry law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Hardware_INTEGRATEDCIRCUITS [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics Wafer Transceiver business |
| Zdroj: | 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2017, Hsinchu, Taiwan. pp.1-2, ⟨10.1109/VLSI-TSA.2017.7942492⟩ |
| DOI: | 10.1109/VLSI-TSA.2017.7942492⟩ |
| Popis: | International audience; In this paper we demonstrate the monolithic integration of a fully CMOS compatible hybrid DBR laser on the backside of a SOI wafer. This innovative approach allowed implementing CMOS compatible electric interconnects and optical sources on a same chip. The optical characterizations confirm the single wavelength behavior of the realized devices which present a SMSR higher than 35 dB and can be tuned over 4 nm, opening the route to a fully integrated optical transceiver on a Si platform. |
| Databáze: | OpenAIRE |
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