| Autor: |
B. G. Svensson, S. Fatima, A. Hallén, J. Lalita, Niklas Keskitalo, P. Pellegrino, Chennupati Jagadish |
| Předmět: |
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| Zdroj: |
Scopus-Elsevier |
| Popis: |
The temperature dependence of the so-called reverse dose rate effect for generation of vacancy-type defects in silicon has been investigated using samples implanted with 1.3 MeV protons at temperatures between 70 and 300 K. The effect is found to involve a thermally controlled process which exhibits an activation energy of ∼0.065 eV, possibly associated with rapid migration of Si self-interstitials (I). Further, using a concept of dual Si ion-implants long range migration of I:s at room temperature has been studied. Annihilation of vacancy-type defects at a depth of ∼3 μm is obtained by injection of I:s from a shallow implant with sufficiently high dose. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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