Growth rate of yttria-stabilized zirconia thin films formed by electrochemical vapor-deposition using NiO as an oxygen source
| Autor: | Minoru Inaba, Akimasa Tasaka, Kenji Kikuchi, Tomoyuki Maeda, Tadayoshi Takahashi, Shinji Nakanishi, Zempachi Ogumi, Atsushi Mineshige |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Nickel oxide Inorganic chemistry Non-blocking I/O Oxide General Chemistry Chemical vapor deposition Condensed Matter Physics chemistry.chemical_compound chemistry Chemical engineering Deposition (phase transition) General Materials Science Cubic zirconia Thin film Yttria-stabilized zirconia |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0167-2738 |
| Popis: | Thin films of yttria-stabilized zirconia (YSZ) were formed onto nickel oxide substrates by an electrochemical vapor deposition process using the substrates as oxygen sources, and ZrCl 4 and YCl 4 as metal sources. After deposition at 1000 °C for 1–6 h, dense films of cubic YSZ were formed. The film thickness increased linearly with deposition time, and the linear growth rate constant was 1.1 × 10 −4 μ m s −1 . The deposition kinetics were discussed, and it was concluded that the rate-determining step of this process is not the electrochemical transportation of the oxide ions and electrons through the growing film, but the mass transport of oxygen gas, which is dissociated from the NiO substrate, through the substrate pores to the NiO/YSZ interface. |
| Databáze: | OpenAIRE |
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