Two-dimensional electron gas at the interface of Ba0.8Sr0.2TiO3 ferroelectric and LaMnO3 antiferomagnet
| Autor: | I. I. Piyanzina, A. M. Balbashov, R. F. Mamin, I. A. Garifullin, V. M. Mukhortov, D. P. Pavlov, Dmitrii Tayurskii |
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| Přispěvatelé: | Институт физики, Казанский федеральный университет |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Solid-state physics двумерный электронный газ теория функционала плотности 02 engineering and technology Epitaxy 01 natural sciences сегнетоэлектрик Condensed Matter::Materials Science Electrical resistance and conductance антиферромагнетик тонкие пленки Condensed Matter::Superconductivity 0103 physical sciences Antiferromagnetism 010306 general physics Polarization (electrochemistry) Физика Condensed matter physics Heterojunction 021001 nanoscience & nanotechnology Ferroelectricity Condensed Matter::Strongly Correlated Electrons 0210 nano-technology Single crystal |
| Zdroj: | JETP Letters. 106:460-464 |
| ISSN: | 1090-6487 0021-3640 |
| DOI: | 10.1134/s0021364017190109 |
| Popis: | The temperature dependence of the electrical resistance has been studied for heterostructures formed by antiferromagnetic LaMnO3 single crystals of different orientations with epitaxial films of ferroelectric Ba0.8Sr0.2TiO3 deposited onto them. The measured electrical resistance is compared to that exhibited by LaMnO3 single crystals without the films. It is found that, in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The numerical simulations of the structural and electronic characteristics of the BaTiO3/LaMnO3 ferroelectric−antiferromagnet heterostructure has been performed. The transition to the state with two-dimensional electron gas at the interface is demonstrated. |
| Databáze: | OpenAIRE |
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