Electron velocity overshoot and nonequilibrium phonons in a GaAs-basedp-i-nnanostructure studied by transient subpicosecond Raman spectroscopy
| Autor: | Hadis Morkoç, David K. Ferry, Arnel Salvador, Kong-Thon Tsen, E. D. Grann, A. Botcharev |
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| Rok vydání: | 1996 |
| Předmět: |
Physics
Condensed matter physics Phonon Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electron spectroscopy Molecular physics symbols.namesake Velocity overshoot Electric field symbols Overshoot (microwave communication) Coherent anti-Stokes Raman spectroscopy Raman spectroscopy |
| Zdroj: | Physical Review B. 53:9838-9846 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.53.9838 |
| Popis: | Transient subpicosecond Raman spectroscopy has been used to study electron velocity overshoot as well as nonequilibrium phonons in a GaAs-based p-i-n nanostructure under the application of high electric fields. Both electron distribution functions and nonequilibrium phonon populations were directly obtained in the velocity overshoot regime for a variety of electric field intensities and for different electron densities. All of our experimental results are compared with ensemble Monte Carlo calculations and good agreement is achieved. \textcopyright{} 1996 The American Physical Society. |
| Databáze: | OpenAIRE |
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