Optical and electrical properties of a-Si:H prepared by reactive sputtering
| Autor: | H. Isotalo, Pekka Kuivalainen, U Gyllenberg-Gästrin, M. Leppihalme |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1984 |
| Předmět: |
Amorphous silicon
Materials science Magnetoresistance Silicon Photoconductivity Analytical chemistry chemistry.chemical_element Conductivity Condensed Matter Physics Atomic and Molecular Physics and Optics chemistry.chemical_compound chemistry Sputtering Electrical resistivity and conductivity Thin film Mathematical Physics |
| Zdroj: | Gyllenberg-Gästrin, U, Kuivalainen, P, Leppihalme, M & Isotalo, H 1984, ' Optical and electrical properties of a-Si:H prepared by reactive sputtering ', Physica Scripta, vol. 29, no. 4, pp. 372-377 . https://doi.org/10.1088/0031-8949/29/4/015 |
| ISSN: | 1402-4896 0031-8949 |
| DOI: | 10.1088/0031-8949/29/4/015 |
| Popis: | Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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