Unlocking diamond's potential as an electronic material

Autor:	A. Kaiser, E. Kohn, Geoffrey Alan Scarsbrook, Ian Friel, Steven Edward Coe, H. El-Hajj, Jan Isberg, A. Denisenko, R.S. Balmer, S M Woollard, C. J. H. Wort
Rok vydání:	2007
Předmět:	Materials science Synthetic diamond General Mathematics Semiconductor materials Doping Transistor General Engineering General Physics and Astronomy Diamond Nanotechnology engineering.material Engineering physics law.invention law engineering Electronics Current density Voltage
Zdroj:	Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences. 366:251-265
ISSN:	1471-2962 1364-503X
DOI:	10.1098/rsta.2007.2153
Popis:	In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10 kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30 mA mm −1 along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3f7b3ae40a0f58da0a4dcf01ab3dc4c https://doi.org/10.1098/rsta.2007.2153 Zobrazit plný text záznamu