Small-signal performance and modeling of sub-50nm nMOSFETs with fT above 460-GHz
| Autor: | J. Feng, William M. Mansfield, R. Cirelli, Jiunn B. Heng, Avi Kornblit, V. Dimitrov, O. Dimauro, Milton Feng, J.F. Miner, T.W. Sorsch, A. Taylor, Gregory Timp, J.E. Bower, F. Klemens, E. Ferry, Kaethe Timp, R. Chan, M. Hafez |
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| Rok vydání: | 2008 |
| Předmět: |
Super high frequency
Materials science business.industry Electrical engineering Condensed Matter Physics Noise figure Signal Article Cutoff frequency Electronic Optical and Magnetic Materials MOSFET Materials Chemistry Scattering parameters Optoelectronics Parasitic extraction Electrical and Electronic Engineering business Microwave |
| Zdroj: | Solid-State Electronics. 52:899-908 |
| ISSN: | 0038-1101 |
| Popis: | We have fabricated and tested the performance of sub-50nm gate nMOSFETs to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. For a 30nm×40 μm×2 device, we found f(T) =465GHz at V(ds)=2V, V(g)=0.67V, which is the highest cut-off frequency reported for a MOSFET produced on bulk silicon substrate so far. However, our measurements of f(max) and noise figure indicate that parasitics impose limitations on SHF operation. We also present a high-frequency ac model appropriate to sub-50nm gate length nanotransistors, which incorporates the effects of the parasitics. The model accurately accounts for measurements of the S and Y parameters in the frequency range from 1 to 50GHz. |
| Databáze: | OpenAIRE |
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