Bi-Crystal Compensation Method for the Over-Response of Solid-State Dosimetry
| Autor: | Julien Ribouton, Ruoxi Wang, J. Balosso, P. Jalade, Guo-Neng Lu, Jean Marc Galvan, Patrick Pittet, Anders Ahnesjö |
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| Přispěvatelé: | INL - Conception de Systèmes Hétérogènes (INL - CSH), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Service de Radiophysique et Radiovigilance, Centre Hospitalier Lyon Sud, Hospices Civils de Lyon (HCL), Centre Hospitalier Lyon Sud [CHU - HCL] (CHLS), Rayonnement Synchrotron et Recherche Medicale (RSRM), Université Joseph Fourier - Grenoble 1 (UJF)-European Synchrotron Radiation Facility (ESRF)-Institut National de la Santé et de la Recherche Médicale (INSERM) |
| Rok vydání: | 2014 |
| Předmět: |
Photon
Materials science Dosimeter business.industry Mechanical Engineering Monte Carlo method Gallium nitride Fluence Imaging phantom [SPI]Engineering Sciences [physics] chemistry.chemical_compound Optics chemistry Mechanics of Materials Dosimetry General Materials Science Irradiation business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Key Engineering Materials Key Engineering Materials, Trans Tech Publications, 2014, 605, pp.540-543. ⟨10.4028/www.scientific.net/KEM.605.540⟩ |
| ISSN: | 1662-9795 1013-9826 |
| DOI: | 10.4028/www.scientific.net/kem.605.540 |
| Popis: | Solid-state dosimetry employs highly sensitive semiconductors such as Gallium Nitride (GaN) and Silicon (Si), but they have a common drawback of over response compared to tissues for low-energy scattered photons, which induces inacceptable errors for radiotherapy application. To tackle this issue, we propose a compensation method consisting in using two different materials of dosimetric interest with different atomic numbers. Their responses are denoted as SC1 and SC2. The response ratio SC1/water as a function of the ratio SC1/SC2 exhibits a monotonic curve that can serve as reference to compensate the over-response of SC1. To validate this method, we have studied the dosimetric response of GaN (0.1 mm3) and Si crystals (2.5 mm3) by simulations, using a validated model based on the general cavity theory in a homogeneous water phantom. The dosimetric response of GaN and Si calculated using the model has errors within 2.5% compared to measured data. The local fluence spectra have been obtained by convolution of pencil beam kernel built by Monte Carlo simulations for different clinical irradiation conditions with field size (from 5×5 cm2up to 20×20 cm2) at depth in the phantom (from 2 cm to 25 cm). The obtained results confirm a monotone relationship between GaN/water dose ratio and GaN/Si dose ratio. The reference curve is independent of irradiation conditions (field size, dosimeter position...), and allows determination of compensation value by identification. |
| Databáze: | OpenAIRE |
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