2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications
| Autor: | Farooq Ahmad Khanday, Faisal Bashir, Fawnizu Azmadi Hussin, Shazia Rashid, M. Rafiq Beigh |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
multiple gate devices
General Computer Science Schottky barrier Transconductance 2D devices 02 engineering and technology 01 natural sciences tunnel FET 0103 physical sciences MOSFET Figure of merit General Materials Science Gain–bandwidth product 010302 applied physics Physics Schottky MOSFET General Engineering Schottky diode 021001 nanoscience & nanotechnology Cutoff frequency TK1-9971 Product (mathematics) ComputingMethodologies_DOCUMENTANDTEXTPROCESSING Electrical engineering. Electronics. Nuclear engineering Atomic physics 0210 nano-technology RF applications |
| Zdroj: | IEEE Access, Vol 9, Pp 80158-80169 (2021) |
| ISSN: | 2169-3536 |
| Popis: | In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for low power design applications. The use of floating gates modulates the Schottky barrier width, hence improves the ON state and RF/Analog figures of merit performance of the proposed device in comparison to a conventional device. A significantly high ION( $1.231\times 10^{-4}\text{A}/\mu \text{m}$ ) and ION/IOFF ratio ( $2.52\times 10^{5}$ ) is achieved in the proposed ST-MOSFET in comparison to conventional ST-MOSFET having $\text{I}_{\mathrm {ON {}}}(1\times 10^{-7}\text{A}/\mu \text{m}$ ) and ION/IOFF ratio ( $1\times 10^{2}$ ). It has been observed that there is more than 100 times improvement in cutoff frequency ( $f_{\mathrm {T}}$ ), transconductance frequency product (TFP), gain frequency product (GFP), gain transconductance frequency product (GTFP), gain bandwidth product (GBP) and max oscillation frequency ( $f_{\mathrm {max}}$ ) in comparison to conventional ST-MOSFET. In addition, there are reductions of 98% and 33.33% in switching ON and OFF delays respectively in the proposed device-based inverter circuit in comparison to conventional ST-MOSFET based inverter circuit. Furthermore, the proposed ST-MOSFET device does not require any highly doped regions, hence does not have any doping related issues. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|