Reliable 100mw Strained-layer Ridge Waveguide Lasers
| Autor: | Aland K. Chin, J.H. Zarrabi, M. Wober, J. E. Bisberg, L. S. Heath, Kathleen Meehan |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Heterojunction Chemical vapor deposition Laser Electronic Optical and Magnetic Materials Semiconductor laser theory Transverse mode law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Constant current Electrical and Electronic Engineering business Indium gallium arsenide |
| Zdroj: | 50th Annual Device Research Conference. |
| DOI: | 10.1109/drc.1992.671890 |
| Popis: | Summary form only given. Reliable operation of InGaAs quantum-well strained-layer single-mode ridge waveguide lasers at 100 mW has been achieved. A separate-confinement, In/sub 0.2/Ga/sub 0.8/As single-quantum-well heterostructure was grown by metal-organic chemical vapor deposition. The lasers operate in the fundamental transverse mode to 100 mW, and in higher order modes to a maximum output power of 300 mW, where thermal rollover occurs. Nine lasers were aged at 25 degrees C for 1000 h at constant current corresponding initially to a power of 100 mW. After aging, the current required to obtain 100 mW increased by 3% on average. The median lifetime for these lasers is estimated to be 40000 h. > |
| Databáze: | OpenAIRE |
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