Inorganic Perovskite Quantum Dot-Based Strain Sensors for Data Storage and In-Sensor Computing
| Autor: | Ziyu Xiong, Ye Zhou, Ming-Zheng Li, Kui Zhou, Su-Ting Han, Guanglong Ding, Liangchao Guo |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Linearity 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Reliability (semiconductor) Quantum dot law Computer data storage Optoelectronics General Materials Science Charge carrier 0210 nano-technology business Polyimide |
| Zdroj: | ACS Applied Materials & Interfaces. 13:30861-30873 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.1c07928 |
| Popis: | Although remarkable improvement has been achieved in stretchable strain sensors, challenges still exist in aspects including intelligent sensing, simultaneous data processing, and scalable fabrication techniques. In this work, a strain-sensitive device is presented by fabricating a CsPbBr3 quantum dots (QDs) floating-gate field-effect transistor (FET) sensing array on thin polyimide (PI) films. The FET exhibits an excellent on/off ratio (>103) and a large memory window (>2 V). With the introduction of CsPbBr3 QDs as the trapping layer, an additional UV response is obtained because of the photogenerated charge carriers that significantly enhance the source-drain current (IDS) of the device. At each electrical state, the IDS varies with the strains and the sensing range is from compressive +12.5% to tensile -10.8%. Excellent data retainability and mechanical durability demonstrate the high quality and reliability of the fabricated sensors. Furthermore, synapse functions including long-term potentiation (LTP), long-term depression (LTD), etc., are emulated at the device level. Linearity factor changes of LTP/LTD in different sensing scenarios demonstrate the reliability of the device and further confirm the different sensing mechanisms with/without UV illumination. Our results exhibit the potential of transistor-based devices for multifunctional intelligent sensing. |
| Databáze: | OpenAIRE |
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