Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures
| Autor: | Yosef Badali, Ehsan Ahadi Akhlaghi, Şemsettin Altındal, Yashar Azizian-Kalandaragh |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Nanocomposite business.industry Scanning electron microscope Analytical chemistry Dangling bond chemistry.chemical_element Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Capacitance Copper Electronic Optical and Magnetic Materials Semiconductor chemistry 0103 physical sciences Wafer Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Physica B: Condensed Matter. 546:93-98 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2018.06.019 |
| Popis: | © 2018 Elsevier B.V.In this study, simple ultrasound-assisted method was used for prepare the composite of (Cu-doped PVA) interfacial layer between metal and semiconductor (Al/p-Si). The scanning electron microscopy (SEM) images of the prepared (Cu-doped PVA) nanocomposites have shown an uniform fish scale shape, which are about 100 nm long and several tens of nm in width. Both the Al/p-Si (MS) and Al/(Cu-PVA)/p-Si (MPS) structures were fabricated on the same Si wafer to investigate the effect of this polymer layer on the electrical characteristics by using the current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements at room temperature. The values of reverse-saturation current (Io), ideality factor (n) and zero-bias barrier height (ΦBo) were obtained from the liner part of the forward bias I-V plot as 6.6 × 10−10 A, 3.67 and 0.84 eV for MS structure and 1.82 × 10−8 A, 4.18 and 0.76 eV for MPS structure, respectively. MPS structure has a good rectifier behavior with low leakage current in comparison to the MS structure. The high values of n was attributed to the barrier inhomogeneity at Al/p-Si, special density distribution of Nss at (Cu-PVA)/p-Si interface and both the existence of native SiO2 and deposited of (Cu-doped PVA) interlayer at M/S interface. The energy dependent values of Nss were obtained from the forward bias I-V data and they ranged from the 1.85 × 1013 eV−1cm−2 (0.60 eV -Ev) to 7.40 × 1013 eV−1cm−2 (0.40 eV - Ev) for MS structure and 9.81 × 1012 eV−1cm−2 (0.67 eV -Ev) to 5.26 × 1013 eV−1cm−2 (0.47 eV -Ev) for the MPS structure. Experimental results show that the (Cu-PVA) interlayer can be successfully used instead of traditional insulator layer because of the saturation of dangling bonds. |
| Databáze: | OpenAIRE |
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