Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction
| Autor: | P. Chiquet, V. Della Marca, Thibault Kempf, Marc Bocquet, Arnaud Regnier, Jérémy Postel-Pellerin |
|---|---|
| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Rousset] (ST-ROUSSET), Laboratoire de Polytech Nice-Sophia (Polytech'Lab), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Université Nice Sophia Antipolis (... - 2019) (UNS) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
charge trapping Floating Gate 02 engineering and technology 01 natural sciences Flash memory law.invention Flash (photography) Reliability (semiconductor) law 0103 physical sciences Extraction (military) Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Safety Risk Reliability and Quality 010302 applied physics business.industry Transistor endurance degradation 021001 nanoscience & nanotechnology Condensed Matter Physics Quantitative correlation Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials equivalent transistor Optoelectronics NVM 0210 nano-technology business Cell aging Communication channel |
| Zdroj: | Microelectronics Reliability Microelectronics Reliability, 2018, 88-90, pp.159-163. ⟨10.1016/j.microrel.2018.06.116⟩ Microelectronics Reliability, Elsevier, 2018, 88-90, pp.159-163. ⟨10.1016/j.microrel.2018.06.116⟩ |
| ISSN: | 0026-2714 |
| Popis: | International audience; Nowadays, the study of physical mechanisms that occur during Flash memory cell life is mandatory when reaching the 40nm and beyond nodes in terms of reliability. In this paper we carry out a complete experimental method to extract the floating gate potential evolution during the cell aging. The dynamic current consumption during a Channel Hot Electron operation for a NOR Flash is a proper quantitative marker of the cell degradation. Here both drain and bulk currents are measured and monitored throughout the endurance tests. We coupled these characteristics with quasi-static measurements to correlate the cell degradation with an equivalent transistor. The final goal is to be able to split the physical effects of repetitive hot carrier and Fowler-Nordheim operations, typical of Flash memories, to extract the electrical parameters evolution on a simple equivalent transistor. |
| Databáze: | OpenAIRE |
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