Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism
| Autor: | Peter Stallinga, Clara Santato, Raffaella Capelli, Fabio Cicoira, Siegfried Karg, Maria Loi, Roberto Zamboni, Vellaisamy A. L. Roy, Constance Rost, Mauro Murgia, Michele Muccini |
|---|---|
| Přispěvatelé: | Zernike Institute for Advanced Materials |
| Rok vydání: | 2004 |
| Předmět: |
Organic field-effect transistor
Change injection Field effect transistor Optoelectronics business.industry Mechanical Engineering Transistor Metals and Alloys Biasing Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Organic semiconductor Computer Science::Hardware Architecture chemistry.chemical_compound Computer Science::Emerging Technologies Semiconductor Tetracene chemistry Mechanics of Materials law Materials Chemistry Field-effect transistor Quantum efficiency business |
| Zdroj: | Synthetic Metals, 146(3), 329-334. Elsevier Science |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/j.synthmet.2004.08.028 |
| Popis: | Optoelectronic properties of light-emitting field-effect transistors (LETs) fabricated on bottom-contact transistor structures using a tetracene film as charge-transport and light-emitting material are investigated. Electroluminescence generation and transistor current are correlated, and the bias dependence of the LETs external quantum efficiency is determined. The device's performance degrade rapidly upon gate biasing. The effect is attributed to charge trapping, which can be prevented by operating the devices in pulsed mode. A model for the electron injection mechanism in a p-type organic transistor is proposed. On the basis of this model, electrical and optical characteristics, as well as the dependence of the external quantum efficiency on drain- and gate-bias, are well reproduced. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect