Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
| Autor: | Masahiro Asada, Kaoru Shizuno, Safumi Suzuki, Haruki Yokoyama, Hiroki Sugiyama, Atsushi Teranishi |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Physics
Oscillation business.industry chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Power (physics) Reduction (complexity) Optics chemistry Optoelectronics Transit (astronomy) Electrical and Electronic Engineering business Quantum tunnelling Indium Diode Common emitter |
| Zdroj: | IEICE Electronics Express. 9:385-390 |
| ISSN: | 1349-2543 |
| DOI: | 10.1587/elex.9.385 |
| Popis: | Fundamental oscillations up to 1.08THz with the output power of 5.5 microwatts was achieved in GaInAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introduced to reduce the tunneling and transit delays. The first two of these structures are the same as those in RTDs oscillating at 1.04THz reported recently, and the last structure provided for further reduction of the transit time and increase in frequency due to suppression of the Γ-L transition and increment of the launching velocity. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|