MOMBE selective infill growth of InP/GaInAs for quantum dot formation

Autor: Dieter Bimberg, G Urmann, S. Schelhase, S Thiel, R. Gibis, Harald Künzel, R. Steingruber, O. Stier
Přispěvatelé: Publica
Rok vydání: 2000
Předmět:
iii-v semiconductors
edge effects
molecular beam epitaxial growth
quantum dot formation
metalorganic molecular beam epitaxy
Epitaxy
semiconductor quantum dots
Inorganic Chemistry
electron beam lithography
Optics
30 to 100 nm
InP-(gain)As
Materials Chemistry
epitaxial infill regrowth
vertical growth rate
Reactive-ion etching
Quantum well
selective infill growth
business.industry
Chemistry
sputter etching
semiconductor epitaxial layers
reactive ion etching
coherent growth effects
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
gallium arsenide
semiconductor growth
Blueshift
indium compounds
quantum wells
Quantum dot
SEM
Optoelectronics
photoluminescence
Light emission
hole array
business
scanning electron microscopy
Electron-beam lithography
Molecular beam epitaxy
Zdroj: Journal of Crystal Growth. 209:499-503
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(99)00605-3
Popis: Quantum dots based on InP/GaInAs quantum wells were realised using epitaxial infill regrowth into a hole array formed in InP by means of e-beam lithography and reactive ion etching. Metal organic molecular beam epitaxy has been applied for selective infill growth. The growth procedure has been elaborated such that the vertical growth rate in predefined holes agrees with coherent growth and edge effects are minimised. Quantum dots formed in holes with a diameter ranging from 60 nm down to 30 nm in combination with a periodicity of 100 nm were studied. The achievement of quantum dots was evidenced by a blue shift of light emission with decreasing the geometrical quantum dot diameter, in qualitative agreement with calculations. Quantitative discrepancies were found because the effective lateral diameter of the quantum dots proved to be smaller than the geometrical value of the etched holes, caused by the lateral growth of the lower InP barrier.
Databáze: OpenAIRE
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