Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon
Autor: | Wai Son Ko, Stephen Adair Gerke, Indrasen Bhattacharya, Connie J. Chang-Hasnain, Kar Wei Ng, Thai-Truong D. Tran |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Multidisciplinary Materials science business.industry Amplifier Transistor 02 engineering and technology Photodetection 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy Capacitance Article law.invention Photodiode chemistry.chemical_compound Responsivity chemistry law 0103 physical sciences Indium phosphide Optoelectronics 0210 nano-technology business Dark current |
Zdroj: | Scientific Reports |
ISSN: | 2045-2322 |
Popis: | Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. |
Databáze: | OpenAIRE |
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