Silicon-Integrated High-Speed Modulators Based on Barium Titanate with Record-Large Pockels Coefficients
Autor: | Daniele Caimi, Pablo Sanchis, P. Castéra, J. Elliott Ortmann, Darius Urbonas, Felix Eltes, Jean Fompeyrine, Stefan Abel, Lukas Czornomaz |
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Rok vydání: | 2019 |
Předmět: |
Silicon photonics
Materials science Silicon business.industry Optical communication chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Pockels effect 010309 optics chemistry CMOS 0103 physical sciences Optoelectronics Photonics 0210 nano-technology Joule heating business Electronic circuit |
Zdroj: | Scopus-Elsevier |
DOI: | 10.1109/cleoe-eqec.2019.8872385 |
Popis: | Integrated photonics is a key technology platform for optical communication, sensing, and data processing. Driven by the success of the CMOS industry and the resulting maturity of silicon-based fabrication methods, silicon photonics has evolved as an important candidate to realize integrated photonic circuits (PICs) in a cost-efficient and scalable way. Electrical control of the optical properties is critical in PICs: Fast electro-optical modulators are essential to reach high data rates, low-loss switches are needed to dynamically reconfigure networks, and low-power tuning elements are important to compensate temperature fluctuations. Traditionally, such components are implemented in silicon photonics by exploiting the plasma-dispersion effect [1] or Joule heating [2], which are, however, intrinsically linked with optical absorption or high power consumption. These challenges could be solved by using the Pockels effect as an electro-optic switching mechanism. However, because silicon lacks a Pockels effect, other materials with a non-vanishing Pockels effect need to be integrated on the technology platform. |
Databáze: | OpenAIRE |
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