Modeling of diamond field-effect transistors for rf ic development
| Autor: | Antonio Serino, Maria Cristina Rossi, A. Corsaro, Walter Ciccognani, P. Calvani, Ernesto Limiti, B Pasciuto, Gennaro Conte |
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| Přispěvatelé: | Pasciuto, B, Ciccognani, W, Limiti, E, Serino, A, Calvani, P, Corsaro, A, Conte, G, Rossi, Maria Cristina |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
device modeling
Engineering wide band semiconductors electrical characteristics Hardware_PERFORMANCEANDRELIABILITY engineering.material Settore ING-INF/01 - Elettronica Polycrystalline diamond law.invention law Hardware_INTEGRATEDCIRCUITS semiconductor devices Electrical and Electronic Engineering device technology business.industry Transistor Electrical engineering Diamond Semiconductor device Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials small-signal equivalent circuit DC and RF performance Optoelectronics Equivalent circuit Field-effect transistor business Microwave Hardware_LOGICDESIGN |
| Popis: | On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model was formulated and characterized for metal-semiconductor field effect transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias-dependent transistor behavior representation was fully determined. Such an equivalent circuit model is the first important step to realize an RF IC based on diamond. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2783–2786, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24734 |
| Databáze: | OpenAIRE |
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