Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics
| Autor: | Rafael Cignani, Alberto Santarelli, Dominique Schreurs, Fabio Filicori, Corrado Florian, Daniel Niessen, Pier Andrea Traverso, Gian Piero Gibiino |
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| Přispěvatelé: | A. Santarelli, D. Niessen, R. Cignani, G. P. Gibiino, P. A. Traverso, C. Florian, D. Schreur, F. Filicori |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Resistive touchscreen
Materials science business.industry Transistor Signal Field effect transistors Semiconductor device models Silicon carbide Gallium Nitride Characterization (materials science) law.invention Nonlinear system law Performance prediction Optoelectronics Field-effect transistor Gan transistors Non-linear model Pulse measurement business Microwave |
| Popis: | A double-pulse technique for the I/V characterization of GaN-based transistors is adopted for the nonlinear modeling of a 0.25 μm AlGaN/GaN on SiC FET. Experimental validation is provided by means of large-signal PA performance prediction both at low-frequency, in order to outline the role played by the resistive drain current source, and at microwaves. Improved prediction accuracy is demonstrated with respect to the use of standard single-pulse I/V characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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