Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging
| Autor: | Tilo Baumbach, Petr Mikulík, Dušan Korytár, Petra Pernot, Lukas Helfen, Nicola Verdi, C. Ferrari, D. Lübbert |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
010302 applied physics
Diffraction Materials science business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences General Biochemistry Genetics and Molecular Biology Crystal Condensed Matter::Materials Science Optics Semiconductor 61.50.-f Structure of bulk crystals 0103 physical sciences Wafer Diffraction topography Dislocation 0210 nano-technology business Burgers vector |
| Zdroj: | Journal of applied crystallography 38 (2005): 91–96. doi:10.1107/S0021889804028195 info:cnr-pdr/source/autori:Lübbert D., Ferrari C., Mikulík P., Pernot P., Helfen L., Verdi N., Korytár D. and Baumbach T./titolo:Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging/doi:10.1107%2FS0021889804028195/rivista:Journal of applied crystallography/anno:2005/pagina_da:91/pagina_a:96/intervallo_pagine:91–96/volume:38 |
| DOI: | 10.1107/S0021889804028195 |
| Popis: | The method called `rocking-curve imaging' (RCI) has recently been developed to visualize lattice imperfections in large crystals such as semiconductor wafers with high spatial resolution. The method is based on a combination of X-ray rocking-curve analysis and digital X-ray diffraction topography. In this article, an extension of the method is proposed by which dislocation densities in large-scale samples (semiconductor wafer crystals) can be quantified and their variation across the sample surface determined in an instrumentally simple way. Results from a nearly dislocation-free S-doped InP crystal and a semi-insulating GaAs are presented; both display a clearly non-random distribution of dislocations. |
| Databáze: | OpenAIRE |
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