Mechanism of Power Density Degradation due to Trapping Effects in AlGaN/GaN HEMTs
| Autor: | A. Campovecchio, R. Lossy, Joachim Würfl, Raymond Quéré, C. Charbonniaud, S. De Meyer |
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| Přispěvatelé: | Institut de Recherche en Communications Optiques et Microondes (IRCOM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2003 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Wide-bandgap semiconductor 020206 networking & telecommunications Gallium nitride 02 engineering and technology Substrate (electronics) Trapping 01 natural sciences law.invention [SPI.TRON]Engineering Sciences [physics]/Electronics Modeling and simulation chemistry.chemical_compound chemistry law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics business ComputingMilieux_MISCELLANEOUS Voltage Power density |
| Zdroj: | IEEE MTT-S, International Symposium on Microwave Theory and Techniques IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 2003, Philadelphia, PA, United States. pp. 455-458, ⟨10.1109/MWSYM.2003.1210974⟩ Scopus-Elsevier |
| DOI: | 10.1109/MWSYM.2003.1210974⟩ |
| Popis: | AlGaN/GaN HEMTs are promising devices for very high power applications. These transistors present high breakdown voltages and have already shown their ability to operate at high temperature. But their power performances are limited because of the presence of traps within the material, decreasing the drain current density. In order to predict the loss of power density and quantify trapping effects, simulations need to be performed with a suitable model, which accounts for these parasitic trapping effects. This paper deals with the characterization, modeling and simulation of trapping effects and power behavior of a 1 mm GaN device on a SiC substrate. Experimental results are compared to the simulations. |
| Databáze: | OpenAIRE |
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