Effect of thickness on metal-to-semiconductor transition in 2-dimensional TiN thin films
| Autor: | Dhananjay Kumar, Svitlana Fialkova, Manosi Roy, Nikhil Reddy Mucha |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Physics QC1-999 General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Atmospheric temperature range Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Titanium nitride Variable-range hopping Pulsed laser deposition chemistry.chemical_compound chemistry 0103 physical sciences Sapphire Thin film Composite material 0210 nano-technology Tin |
| Zdroj: | AIP Advances, Vol 11, Iss 4, Pp 045204-045204-8 (2021) |
| ISSN: | 2158-3226 |
| Popis: | Titanium nitride thin films have been grown on c-plane sapphire substrates using a pulsed laser deposition technique in the thickness range of 6–45 nm. X-ray diffraction (XRD) analysis has demonstrated TiN (111) as the preferred orientation of growth on the sapphire substrates. The XRD measurements have also indicated that orientational alignment between the TiN and the sapphire improved with an increase in the TiN film thickness. A change in the resistivity behavior of the TiN thin films from metallic to semiconducting has been observed as the TiN film thickness is reduced below 15 nm. Analyzing and fitting of TiN films’ conductivity data have shown that while the Arrhenius law governs their conductivity in the temperature range of 300–350 K, conductivity values of the films follow the variable range hopping mechanism below 300 K. |
| Databáze: | OpenAIRE |
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