Effects of the thickness on the properties of erbium-doped silicon-rich silicon oxide thin films

Autor: Blas Garrido, Jean-Louis Doualan, Olivier Jambois, Sébastien Cueff, Khalil Hijazi, Julien Cardin, Christophe Labbé, Richard Rizk
Přispěvatelé: Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Departament d'Electronica (MIND-IN2UB), Universitat de Barcelona (UB), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Micronanotecnologies i nanoscòpies per dispositius electrònics i fotònics [Spain] (LENS, MIND-IN2UB)
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: physica status solidi (c)
physica status solidi (c), Wiley, 2011, E-MRS 2010 Spring Meeting – Symposium I: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II • E-MRS 2010 Spring Meeting – Symposium J: Silicon-based Nanophotonics, 8 (3), pp.1027-1032. ⟨10.1002/pssc.201000390⟩
physica status solidi (c), 2011, E-MRS 2010 Spring Meeting – Symposium I: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II • E-MRS 2010 Spring Meeting – Symposium J: Silicon-based Nanophotonics, 8 (3), pp.1027-1032. ⟨10.1002/pssc.201000390⟩
ISSN: 1610-1634
1610-1642
DOI: 10.1002/pssc.201000390⟩
Popis: International audience; The present study examines the influence of the layer thickness on the emission of Er ions coupled to Si nanoclusters within a silica matrix obtained by magnetron co-sputtering at two typical temperatures (ambient and 500 °C. Such an investigation is essential to optimise the material for specific applications, inasmuch as thin layers of tens of nm are requested for electrically-excited devices, while much thicker films (≥ 1 µm) are necessary for optically-excited waveguides, lasers, etc. The Er PL was detected from as-deposited samples with significant intensity for that grown at 500 °C. This PL improves with annealing and also with the layer thickness, up to a factor 4 when the thickness is increased from few tens to more than 1.3 µm.The origin of this behaviour seems to lie in some limiting factors related to the film thinness, such as barriers for nucleation and growth of sensitizers (Si-ncs), stresses affecting the onset of phase separation and then the formation of Si-ncs. To favour the growth of Si-ncs in films as thin as tens of nm, the increase of the amount of Si excess was found to be necessary to enhance the Er PL through an increase of the density of Si-ncs and, therefore, the coupling with Er ions. Such an enrichment with Si offers an additional advantage of favouring the injection and transport of carriers by electrical excitation
Databáze: OpenAIRE
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