Comparative Experimental Evaluation of Zero-Voltage-Switching Si Inverters and Hard-Switching Si and SiC Inverters
Autor: | Gabriele Rizzoli, Michele Mengoni, Domenico Casadei, Angelo Tani, Luca Zarri, Giovanni Serra |
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Přispěvatelé: | Rizzoli, Gabriele, Mengoni, Michele, Zarri, Luca, Tani, Angelo, Serra, Giovanni, Casadei, Domenico |
Rok vydání: | 2019 |
Předmět: |
Silicon
Materials science Energy Engineering and Power Technology Topology (electrical circuits) Silicon carbide 02 engineering and technology Topology law.invention chemistry.chemical_compound law inverter Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering 0501 psychology and cognitive sciences Electrical and Electronic Engineering 050107 human factors Electronic circuit business.industry 020208 electrical & electronic engineering 05 social sciences Bipolar junction transistor Electrical engineering Capacitor Converters Zero voltage switching losse Switche Power (physics) chemistry DC-AC power conversion resonant power conversion Inverter business |
Zdroj: | IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:515-527 |
ISSN: | 2168-6785 2168-6777 |
DOI: | 10.1109/jestpe.2018.2831603 |
Popis: | Several efforts have been put in the reduction of the power losses of dc–ac converters by investigating soft-switching topologies, which have been reported to boost efficiencies of silicon inverters up to 99%. However, the auxiliary circuits of the switches significantly impact on the circuit complexity. Conversely, the use of wide bandgap devices offers an alternative for the reduction of the losses, while keeping the simple structure of a traditional inverter. This paper aims to experimentally evaluate the performance of four prototypes in terms of efficiency and costs. Two zero-voltage switching inverters, differing only in the power switches, and two comparable hard-switching inverters, mounting both silicon and silicon carbide devices, have been built and compared. Overall, the soft-switching inverters allow improving the efficiency at high output current in comparison with hard-switching Si inverters, but their efficiency is comparable to that of silicon carbide (SiC) inverters or even lower at low output currents. The economic analysis has shown that the cost of the power stage of the soft-switching inverters and the hard-switching SiC inverter is about 2.5 and 1.5 times that of the hard-switching inverter based on Si insulated gate bipolar transistors, respectively. |
Databáze: | OpenAIRE |
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