Defect-mediated sputtering process of boron nitride during high incident angle low-energy ion bombardment
| Autor: | Sylwia Kozdra, Zbigniew Postawa, Adrianna Wójcik, Paweł Piotr Michałowski, Piotr Caban, Dawid Maciążek, Jacek M. Baranowski |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
02 engineering and technology secondary ion mass spectrometry 01 natural sciences Molecular physics Ion chemistry.chemical_compound Sputtering 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Anisotropy Instrumentation Range (particle radiation) Applied Mathematics 020208 electrical & electronic engineering 010401 analytical chemistry Condensed Matter Physics Ion bombardment 2D materials molecular dynamics 0104 chemical sciences Secondary ion mass spectrometry boron nitride chemistry Boron nitride sputtering Layer (electronics) |
| Popis: | Further development of hexagonal boron nitride (hBN) towards electronic devices requires the application of precise analytical techniques. High incident angle (? 65°) secondary ion mass spectrometry has been recently developed, and allows to reach atomic depth. However, the procedure has been optimized experimentally, and thus computer simulations are needed to validate and comprehend the experiment. It is revealed that a sample without any defects cannot be sputtered in such conditions — all ions are reflected from the surface. Only defects, particularly vacancies, can act as erosion centers. After prolong bombardment (dose in the range of 1017 ions cm-2), the number of defects and their sizes are sufficiently large that rapid removal of a top-most hBN layer can be observed. Computer simulations and additional experiments reveal that the sputtering process is defect-mediated and anisotropic — significantly more prominent along the incident direction. |
| Databáze: | OpenAIRE |
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