INTERFACIAL DEFECTS IN GaAs/Si AFTER ANNEALING
| Autor: | B. Bartenlian, André Rocher, J. Chazelas, M.-N. Charasse |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1990 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) General Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Condensed Matter::Materials Science [PHYS.HIST]Physics [physics]/Physics archives 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal de Physique Colloques Journal de Physique Colloques, 1990, 51 (C1), pp.C1-915-C1-920. ⟨10.1051/jphyscol:19901144⟩ |
| DOI: | 10.1051/jphyscol:19901144⟩ |
| Popis: | The threading defects involved in the GaAs/Si heterostructure have been studied in as-grown and annealed specimens. Their origin is related to the imperfections of the interface : impurities, roughness and discontinuities of misfit dislocation network. Large parts of the GaAs layer are almost free of stress in the annealed specimen. Residual stresses and defects are located at the boundaries between the Lomer dislocation arrays. Small antiphase domains are also observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|