Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films: evaluation as thermally self-dissipating dielectrics for GaN transistors
| Autor: | Matthew Whiteside, Zehui Du, Edwin Hang Tong Teo, Zhi Kai Ng, Maziar Shakerzadeh, Minmin Zhu, Soon Siang Chng, Xizu Wang, Siu Hon Tsang |
|---|---|
| Přispěvatelé: | School of Electrical and Electronic Engineering, Research Techno Plaza, Temasek Laboratories |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Band gap Wide-bandgap semiconductor 02 engineering and technology General Chemistry Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Thermal conductivity Aluminum Gallium Nitride Artificial Intelligence Materials Chemistry Optoelectronics Microelectronics Dielectric loss Electrical and electronic engineering::Nanoelectronics [Engineering] Thin film 0210 nano-technology business Sheet resistance |
| Zdroj: | Journal of Materials Chemistry C. 8:9558-9568 |
| ISSN: | 2050-7534 2050-7526 |
| Popis: | High performance tuneable dielectrics at millimetre-wave frequencies are crucial constituents for emerging adaptive and reconfigurable electronic applications in the automotive, artificial intelligence, and telecommunication industries. Hexagonal boron nitride (h-BN), an ideal candidate for gate-insulating dielectrics, is attractive for integrated circuits and photonic devices. However, advanced application to electronic and optoelectronic devices has often been limited by synthesis techniques and flake size, as well as dielectric reliability. Herein, we have studied the isotope engineering of h-BN thin films directly grown on wafer-scale Si and GaN substrates with pure boron isotopes (B10 and B11) in comparison with controlled isotopic compositions. The dielectric characteristics of isotope-enriched h-BN films at frequencies ranging up to 107 Hz were investigated, exhibiting a broad dielectric dispersion with a low dielectric loss, below 1.3%. Furthermore, their optical band gap energies indicate a strong dependence on isotopic composition, ranging from 5.54 to 5.79 eV. Thermal conductivity of pure B10N and B11N over a broad temperature range is superior to those of other compositions, with an enhancement of around 231%. Therefore, the great thermal response combined with excellent dielectric properties and a wide band gap make h-BN a promising dielectric material for heat self-dissipating GaN and AlGaN /GaN transistors. Hall mobility, sheet resistivity and sheet concentration of GaN with B10N films were analyzed, ascertaining that h-BN does function well as both a dielectric layer and a passivating layer on electronic devices. Our findings could lead to microelectronics thermal management and integrated optoelectronic applications at these frequencies. National Research Foundation (NRF) Accepted version The authors would like to acknowledge the funding support from National Research Foundation, Singapore under its NRF-ANR programme (Grant award number: NRF2016-NRF-ANR001). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|