3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature
| Autor: | Peter M. Gammon, Phil Mawby, Amador Pérez-Tomás, Fan Li, Steven A. Hindmarsh, Michael R. Jennings, Yogesh K. Sharma, David M. Martin, David Walker, Craig A. Fisher |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Fabrication Band gap Annealing (metallurgy) TK 02 engineering and technology Silicon carbide 01 natural sciences law.invention Annealing chemistry.chemical_compound MOSFET law Electrical resistivity and conductivity 0103 physical sciences Electronic engineering Electrical and Electronic Engineering Ohmic contact 3C-SiC Ohmic contacts 010302 applied physics Condensed matter physics Transistor Logic gates 021001 nanoscience & nanotechnology Reliability Electronic Optical and Magnetic Materials Channel mobility chemistry Metals 0210 nano-technology |
| Zdroj: | Recercat. Dipósit de la Recerca de Catalunya instname Digital.CSIC. Repositorio Institucional del CSIC Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona Recercat: Dipósit de la Recerca de Catalunya Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| ISSN: | 0741-3106 |
| Popis: | et al. Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10-5 Ω · cm2) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm2/V · s) was achieved compared with the annealed devices. |
| Databáze: | OpenAIRE |
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