Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model

Autor: Julie Tournet, Alexandre Vauthelin, S. Parola, Joanna Kret, Yvan Cuminal, Eric Tournié, Frédéric Martinez, Yves Rouillard
Přispěvatelé: Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Australian National University - Department of engineering (ANU), Australian National University (ANU)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: IEEE Journal of Photovoltaics
IEEE Journal of Photovoltaics, IEEE, 2021, pp.1-8. ⟨10.1109/JPHOTOV.2021.3075290⟩
ISSN: 2156-3381
2156-3403
DOI: 10.1109/JPHOTOV.2021.3075290⟩
Popis: The heterogeneous integration of a GaSb subcell into a 4-terminal cell is currently experiencing a regain of interest for high concentrator multijunction photovoltaics. In this context, the assessment of the lateral charge carrier transport in a GaSb cell under concentrated light is fundamental. The characterization and modeling of a GaSb single-junction solar cell under concentration are presented here. The originality of this article resides in the fine analysis of experimental data using an in-house pseudo-3-D model where the intrinsic diode is modeled with a temperature-dependent 1-D physical model. The limiting factors responsible for the performance drop under concentrated light are discussed. It is also demonstrated that an efficiency of 12.5% can be reached under 64 suns with realistic technological improvements.
Databáze: OpenAIRE