Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model
Autor: | Julie Tournet, Alexandre Vauthelin, S. Parola, Joanna Kret, Yvan Cuminal, Eric Tournié, Frédéric Martinez, Yves Rouillard |
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Přispěvatelé: | Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Australian National University - Department of engineering (ANU), Australian National University (ANU) |
Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: |
Materials science
business.industry Context (language use) Condensed Matter Physics Concentrator Suns in alchemy 7. Clean energy Electronic Optical and Magnetic Materials Gallium arsenide law.invention chemistry.chemical_compound chemistry law Photovoltaics Solar cell Optoelectronics Charge carrier Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business ComputingMilieux_MISCELLANEOUS Diode |
Zdroj: | IEEE Journal of Photovoltaics IEEE Journal of Photovoltaics, IEEE, 2021, pp.1-8. ⟨10.1109/JPHOTOV.2021.3075290⟩ |
ISSN: | 2156-3381 2156-3403 |
DOI: | 10.1109/JPHOTOV.2021.3075290⟩ |
Popis: | The heterogeneous integration of a GaSb subcell into a 4-terminal cell is currently experiencing a regain of interest for high concentrator multijunction photovoltaics. In this context, the assessment of the lateral charge carrier transport in a GaSb cell under concentrated light is fundamental. The characterization and modeling of a GaSb single-junction solar cell under concentration are presented here. The originality of this article resides in the fine analysis of experimental data using an in-house pseudo-3-D model where the intrinsic diode is modeled with a temperature-dependent 1-D physical model. The limiting factors responsible for the performance drop under concentrated light are discussed. It is also demonstrated that an efficiency of 12.5% can be reached under 64 suns with realistic technological improvements. |
Databáze: | OpenAIRE |
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