The boson peak and the first sharp diffraction peak in (As2S3)x(GeS2)1–x glasses
| Autor: | M.V. Popovych, V.P. Sergienko, K.V. Shportko, T.S. Kavetskyy, Optics, H Budapest, Pob , Hungary, L.O. Revutska, I. Kaban, P. Jóvári, Alexander V. Stronski |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Semiconductor physics, quantum electronics & optoelectronics 24(3), 312-318 (2021). doi:10.15407/spqeo24.03.312 |
| ISSN: | 1605-6582 1560-8034 |
| Popis: | Semiconductor physics, quantum electronics & optoelectronics 24(3), 312 - 318 (2021). doi:10.15407/spqeo24.03.312 The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As$_2$S$_3$)$_x$(GeS$_2$)$_{1���x}$ glasses measured using high-resolution Raman spectroscopy and high-energy synchrotron X-ray diffraction measurements are examined as a function of x. It has been found that there is no correlation between the positions of BP and FSDP. The BP position shows a nonlinear composition behavior with a maximum at about x = 0.4, whereas the FSDP position changes virtually linearly with x. The intensities of both BP and FSDP show nonlinear composition dependences with the slope changes at x = 0.4, although there is no direct proportionality. Analysis of the partial structure factors for the glasses with x = 0.2, 0.4 and 0.6 obtained in another study has shown that the cation-cation atomic pairs of Ge���Ge, Ge���As and As���As make the largest contribution to FSDP, where the Ge���Ge and Ge���As pairs are dominant. Published by Inst. of Semiconductor Physics, Kyiv |
| Databáze: | OpenAIRE |
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