Piezoresistive temperature sensors fabricated by a surface micromachining CMOS MEMS process
| Autor: | Zhu Nianfang, Junyan Tan, Hua Di, Cai Chunhua, Ming Qin |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Microelectromechanical systems
Multidisciplinary Materials science Cantilever business.industry lcsh:R 020208 electrical & electronic engineering lcsh:Medicine 02 engineering and technology 021001 nanoscience & nanotechnology Piezoresistive effect Heat capacity Article Monocrystalline silicon Surface micromachining CMOS Operating temperature 0202 electrical engineering electronic engineering information engineering Optoelectronics lcsh:Q lcsh:Science 0210 nano-technology business |
| Zdroj: | Scientific Reports Scientific Reports, Vol 8, Iss 1, Pp 1-11 (2018) |
| ISSN: | 2045-2322 |
| Popis: | This paper presents a micromachined monocrystalline silicon piezoresistive temperature sensor fabricated by a surface micromachining CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-Electro-Mechanical System) process. The design of the temperature sensor is based on the structure of the multi-layer cantilever beam and the bimetallic effect. The temperature change of the cantilever beam is translated into the change of the piezoresistance’s value. The test results show that the sensitivities of the sensors are 27.9 mV/°C with 100 Ω/▯ piezoresistance between −40 °C to 60 °C and 7.4 mV/°C with 400 Ω/▯ piezoresistance between −90 °C to 60 °C. The temperature sensor proposed in this paper can be used in radiosondes for its low operating temperature (as low as −90 °C), small size (below 1 mm2) and low heat capacity. |
| Databáze: | OpenAIRE |
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