Plasma etching processes for the integration of InP based compounds on 200mm Si wafer for photonic applications
| Autor: | Lin, Qinghuang, Engelmann, Sebastian, Pargon, E., Gay, G., Petit-Etienne, C., Brihoum, M., Bizouerne, M., Burtin, P., Barnola, S. |
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| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
[PHYS]Physics [physics] Materials science Plasma etching Passivation business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Etching (microfabrication) 0103 physical sciences Surface roughness Optoelectronics Deposition (phase transition) Process window Wafer Reactive-ion etching 0210 nano-technology business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | SPIE Advanced Lithography SPIE Advanced Lithography, 2016, San Jose, United States. ⟨10.1117/12.2221903⟩ |
| Popis: | Ar/Cl2/CH4 gas mixture has been investigated for the development of plasma etching process dedicated to the patterning of 3μm-deep InP structures integrated on 200mm SiO2 carrier wafer. The plasma process requirements are: high InP etch rates (>500nm.min-1), high InP/SiO2 selectivity ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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