Characterization of defect states in Mg-doped GaN-on-Si p + n diodes using deep-level transient Fourier spectroscopy
| Autor: | Bruno Guillet, Laurence Méchin, Y. Lechaux, Albert Minj, Karen Geens, Eddy Simoen, Ming Zhao, Hu Liang |
|---|---|
| Přispěvatelé: | Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Interuniversity Microelectronics Centre (IMEC), RIN RECHERCHE PLACENANO with contract number 18E01664/18P02478 |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Diffusion barrier Band gap Analytical chemistry deep-level transient Fourier spectroscopy 02 engineering and technology Activation energy 01 natural sciences pn diodes 0103 physical sciences Materials Chemistry defect states Electrical and Electronic Engineering Diode 010302 applied physics DLTFS Dopant Doping 021001 nanoscience & nanotechnology Condensed Matter Physics Acceptor Crystallographic defect Electronic Optical and Magnetic Materials [SPI.TRON]Engineering Sciences [physics]/Electronics 0210 nano-technology GaN-on-Si |
| Zdroj: | Semiconductor Science and Technology Semiconductor Science and Technology, IOP Publishing, 2020, 36 (2), pp.024002. ⟨10.1088/1361-6641/abcb19⟩ |
| ISSN: | 0268-1242 1361-6641 |
| DOI: | 10.1088/1361-6641/abcb19⟩ |
| Popis: | Mg-doped GaN-on-Si p+n diodes have been fabricated and characterized by static electrical and deep-level transient Fourier spectroscopy (DLTFS) measurements. From static capacitance-voltage (C–V) and current–voltage (I–V) characteristics, we estimated the diffusion barrier of the p+n diode close to the GaN band gap at room temperature. The temperature dependence of the capacitance showed freeze-out effect of the Mg-dopants at 200 K. From DLTFS measurements for various reverse bias and pulse voltages, two peaks were found and are composed of different defect states. The first peak with two components was related to diffusion of Mg p-type dopants in the n-GaN and VN-related defects. The two components have activation energies close to 0.25 eV, from valence band and conduction band with a capture cross-section of ∼10−16 cm2. The second peak with two components showed temperature shifts with the pulse height indicating a band-like behavior. This peak was commonly attributed to deep acceptor CN-related defects with an activation energy of E V +0.88 eV and a capture cross-section of 10−13 cm2. A second acceptor level was found, with an activation energy of 0.70 eV and a capture cross-section of 10−15 cm2. This second component was previously attributed to native point defects in GaN. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|