Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
| Autor: | Qiang Li, Kai Sun, Jun-Feng Wang, Fei-Fei Yan, Liping Guo, Lixing You, Han-Feng Wang, Chuan-Feng Li, Guo-Ping Guo, Xiong Zhou, Hao Li, Zheng-Hao Liu, Guang-Can Guo, Jian-Shun Tang, H. M. Liu, Adam Gali, Ji-Yang Zhou, Jin-Shi Xu, Zu-Qing Wang |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Condensed Matter - Materials Science
Quantum Physics Multidisciplinary Materials science Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics media_common.quotation_subject Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences chemistry.chemical_compound chemistry Qubit Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Silicon carbide Contrast (vision) Quantum Physics (quant-ph) media_common Spin-½ |
| Popis: | Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2%, and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast (-30%) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy (NV) centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material. 10 pages, 5 figures |
| Databáze: | OpenAIRE |
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