Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
| Autor: | S.B. Lastovski, Michael Moll, L.I. Murin, Leonid Makarenko, F.P. Korshunov |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Condensed matter physics Silicon Annealing (metallurgy) chemistry.chemical_element Activation energy Electron Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity Thermal Electron beam processing Irradiation Electrical and Electronic Engineering Atomic physics |
| Zdroj: | Journal of End-to-End-testing. 404:4561-4564 |
| ISSN: | 9999-9994 |
| DOI: | 10.1016/s9999-9994(09)20505-8 |
| Popis: | It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about or higher than 100 K. A broad DLTS peak with activation energy of 0.14–0.17 eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120−140 K. Experimental evidences are presented that becoming more mobile under forward current injection the self-interstitials change their charge state to a less positive one. |
| Databáze: | OpenAIRE |
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