Prebond Testing of Weak Defects in TSVs

Autor: Rosa Rodriguez-Montanes, D. Arumi, Joan Figueras
Přispěvatelé: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat
Rok vydání: 2016
Předmět:
Engineering
Design for testing
Overhead (engineering)
Integrated circuits
design for testability
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
Integrated circuit
01 natural sciences
Electric inverters
law.invention
Circuit stability
Automatic test equipment
law
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering
electronic engineering
information engineering

Electronic engineering
Through-silicon vias
Electrical and Electronic Engineering
010302 applied physics
Resistive touchscreen
business.industry
Circuit faults
Enginyeria electrònica [Àrees temàtiques de la UPC]
Process (computing)
Stability analysis
Inverters
Built-in self-test (BIST)
020202 computer hardware & architecture
Built-in self-test
Hardware and Architecture
Fault coverage
Circuits integrats
integrated circuit (IC) testing
business
Stability
Software
Zdroj: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
ISSN: 1557-9999
1063-8210
DOI: 10.1109/tvlsi.2015.2448594
Popis: Through-silicon vias (TSVs) are critical elements in 3-D integrated circuits susceptible to defects during fabrication and lifetime. It is desirable to detect defective TSVs in the early steps of the fabrication process to prevent stacking yield loss. Thus, the development of effective prebond testing techniques becomes of great importance. In this direction, recent research effort has been devoted to the development of two main prebond techniques: 1) prebond probing and 2) built-in self-test (BIST) techniques. The prebond probing poses economic and technological challenges, whereas current BIST proposals have disadvantages for certain solutions. Hence, there is still a need for an effective methodology in terms of fault coverage, area overhead, and test time. This paper proposes a BIST technique based on a simple unbalanced circuit comparing the behavior of two TSVs. Electrical simulation results show the viability of the proposal to detect weak defects, i.e., resistive opens and resistive bridges, adding reasonable area overhead in a short-test application time. Furthermore, an experimental design is built on a 65-nm technology, where resistive open defects are intentionally injected. Automated test equipment measurements confirm the simulation results.
Databáze: OpenAIRE