Positron annihilation and constant photocurrent method measurements on a-Si:H films: A comparative approach to defect identification
| Autor: | M.F. Ferreira Marques, C. Lopes Gil, Zs. Kajcsos, Guilherme Lavareda, A.P. de Lima, C. Nunes de Carvalho, A. Amaral, P.M. Gordo |
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| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
Amorphous silicon
Photocurrent Radiation Materials science Variable-energy positron annihilation Fermi level Constant photocurrent method Fermi energy Density of states Quantitative Biology::Cell Behavior Positron annihilation spectroscopy Condensed Matter::Materials Science symbols.namesake chemistry.chemical_compound Doppler broadening chemistry Vacancy defect symbols Defects Atomic physics human activities |
| Zdroj: | Repositório Científico de Acesso Aberto de Portugal Repositório Científico de Acesso Aberto de Portugal (RCAAP) instacron:RCAAP |
| Popis: | Defect structure of hydrogenated amorphous silicon thin-films was studied by positron annihilation spectroscopy (PAS), whereas the density of states below the Fermi level was measured by constant photocurrent method (CPM). Divacancies and large vacancy clusters were identified as the main defects present in these films, with relative concentrations strongly dependent on the rf-power. Correlation between PAS, CPM results and I(V) characteristics of solar cells suggests the creation of energy levels above the Fermi energy, not observable by CPM, related to large vacancy clusters. http://www.sciencedirect.com/science/article/B6TVT-4JX373P-2/1/af7c69b0fdf17cefb2432fb357d5d86f |
| Databáze: | OpenAIRE |
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