Electrical and optical characterization of planar MSM structures including δ-doped GaAs layers
| Autor: | J. Chovan, D. Hasko, D. Radiewicz, B. Sciana, N. Klasovity, M. Tlaczala, I. Zboirowska-Lindert, A. Vincze, Jaroslav Kováč, P. Gurnik |
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| Rok vydání: | 2002 |
| Předmět: |
Photocurrent
Materials science Oscillation business.industry Doping Computer Science::Software Engineering Photodetector Schottky diode Trapping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Planar chemistry Condensed Matter::Superconductivity Optoelectronics business |
| Zdroj: | Scopus-Elsevier |
| DOI: | 10.1109/edmo.2001.974286 |
| Popis: | In this work the influence of one and two (Si) /spl delta/-doped GaAs layers on the electrical and optical properties of MSM photodetectors has been studied. The sheet concentration and position of /spl delta/-doped layers in the structure were confirmed from C-V and Hall measurements. The properties of TiPtAu and TiPdAu Schottky contacts of MSM structures were analyzed and for interdigited MSM structures lateral measurements of dark and photocurrent current I-V characteristics were investigated. In the spectral characteristics of /spl delta/-doped layers, the presence of Franz-Keldysh oscillation are observable. The high speed measurements revealed that /spl delta/-doped layers effect the trapping of generated carriers and give rise to a decrease in the speed of /spl delta/-doped GaAs MSM photodetectors. |
| Databáze: | OpenAIRE |
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