Noise Parameter Extraction of GaAs MESFETs and PHEMTs From Swept Noise Figure Measurements

Autor:	Wayne Mack Struble
Rok vydání:	1998
Předmět:	Noise chemistry.chemical_compound Materials science Noise measurement chemistry Microwave field effect transistors Scattering parameters Electronic engineering Extraction (military) Noise figure Gallium arsenide
Zdroj:	52nd ARFTG Conference Digest.
Popis:	A new method of measuring and extracting bias dependent noise parameters for GaAs MESFETs and PHEMTs is presented. This technique only requires noise figure and S-parameter measurements over fiequency. This eliminates the need for time-consuming traditional sourcepull measurements and facilitates rapid noise parameter extraction. This technique makes the extraction of bias-dependent noise models of MESFETs and PHEMTs practical, for the first time, in a production test environment.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfa92b9dc828a02b95cd60abbd2fdbd4 https://doi.org/10.1109/arftg.1998.327317 Zobrazit plný text záznamu