Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask
| Autor: | Thi Thu Mai, Ssu Kuan Wu, Hua Chiang Wen, Jin Ji Dai, Jhen Gang Jiang, Wu-Ching Chou, Rong Xuan, Chih Wei Hu, Cheng Wei Liu, Sa Hoang Huynh, Sui An Yen |
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| Rok vydání: | 2020 |
| Předmět: |
Electron mobility
Materials science business.industry GaN HEMT Surfaces and Interfaces Substrate (electronics) Chemical vapor deposition High-electron-mobility transistor Surfaces Coatings and Films Volumetric flow rate lcsh:TA1-2040 2DEG SiNx nano-mask Nano edge threading dislocation Materials Chemistry Surface roughness Optoelectronics V-defects lcsh:Engineering (General). Civil engineering (General) business Layer (electronics) |
| Zdroj: | Coatings Volume 11 Issue 1 Coatings, Vol 11, Iss 16, p 16 (2021) |
| ISSN: | 2079-6412 |
| DOI: | 10.3390/coatings11010016 |
| Popis: | The AlGaN/AlN/GaN high electron mobility transistor structures were grown on a Si (111) substrate by metalorganic chemical vapor deposition in combination with the insertion of a SiNx nano-mask into the low-temperature GaN buffer layer. Herein, the impact of SiH4 flow rate on two-dimensional electron gas (2DEG) properties was comprehensively investigated, where an increase in SiH4 flow rate resulted in a decrease in edge-type threading dislocation density during coalescence process and an improvement of 2DEG electronic properties. The study also reveals that controlling the SiH4 flow rate of the SiNx nano-mask grown at low temperatures in a short time is an effective strategy to overcome the surface desorption issue that causes surface roughness degradation. The highest electron mobility of 1970 cm2/V· s and sheet carrier concentration of 6.42 × 1012 cm&minus 2 can be achieved via an optimized SiH4 flow rate of 50 sccm. |
| Databáze: | OpenAIRE |
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