Intelligence implementation on silicon based on four-terminal device electronics
| Autor: | Tadashi Shibata, Tadahiro Ohmi |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Engineering
Binary number Hardware_PERFORMANCEANDRELIABILITY Integrated circuit law.invention law MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Electronics Electrical and Electronic Engineering Intelligent electronic device Safety Risk Reliability and Quality Electronic circuit Data processing business.industry Transistor Bipolar junction transistor Electrical engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials VMOS Field-effect transistor business Hardware_LOGICDESIGN |
| Zdroj: | Proceedings of International Conference on Microelectronics. |
| Popis: | We will propose the concept of a “four-terminal device” which functionally surpasses three-terminal devices like MOSFET's and bipolar transistors in the ability of controlling the current flowing through a device. The enhanced functionality at the very elemental transistor level is quite essential in creating intelligent functions at the system level. A neuron MOSFET (νMOS), a multiple-input-terminal floating-gate device, is taken as an example of a four-terminal device and the implementation of new-architecture electronic circuits is demonstrated. The binary-multivalue-analog merged hardware algorithms conducted by vMOS circuits provide a highly flexible data processing scheme while assuring the accuracy of binary digital computation, thus presenting a very promising approach to implementing human-intelligence electronic systems on silicon. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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