Thick GaN film stress-induced self-separation
| Autor: | Yuri Lelikov, Andrey Leonidov, Andrey Zubrilov, Vladislav Voronenkov, Y. G. Shreter |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Condensed Matter - Materials Science Materials science Binding energy chemistry.chemical_element Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Gallium nitride Substrate (electronics) 01 natural sciences Stress (mechanics) Cracking chemistry.chemical_compound chemistry 0103 physical sciences Sapphire Composite material 010306 general physics Layer (electronics) Carbon |
| DOI: | 10.48550/arxiv.1902.03463 |
| Popis: | Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that reduced the binding energy between the GaN film and the substrate. Wafer-scale self-separation of thick GaN films has been demonstrated. Comment: Published in Proceedings of the 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) |
| Databáze: | OpenAIRE |
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