A circuit model for defective bilayer graphene transistors
| Autor: | Hiroshi Mizuta, Zakaria Moktadir, Shuojin Hang, Ime J. Umoh, Tom J. Kazmierski |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Ion beam Nanotechnology 02 engineering and technology Electron 01 natural sciences law.invention law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 010302 applied physics business.industry Graphene Bilayer Transistor 021001 nanoscience & nanotechnology Condensed Matter Physics equipment and supplies Crystallographic defect Electronic Optical and Magnetic Materials Optoelectronics 0210 nano-technology business Bilayer graphene Graphene nanoribbons |
| Popis: | This paper investigates the behaviour of a defective single-gate bilayer graphene transistor. Point defects were introduced into pristine graphene crystal structure using a tightly focused helium ion beam. The transfer characteristics of the exposed transistors were measured ex-situ for different defect concentrations. The channel peak resistance increased with increasing defect concentration whilst the on–off ratio showed a decreasing trend for both electrons and holes. To understand the electrical behaviour of the transistors, a circuit model for bilayer graphene is developed which shows a very good agreement when validated against experimental data. The model allowed parameter extraction of bilayer transistor and can be implemented in circuit level simulators. |
| Databáze: | OpenAIRE |
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