Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
| Autor: | Maria Spies, Jakub Polaczyński, Akhil Ajay, Dipankar Kalita, Minh Anh Luong, Jonas Lähnemann, Bruno Gayral, Martien I den Hertog, Eva Monroy |
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| Přispěvatelé: | Matériaux, Rayonnements, Structure (MRS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Matériaux, Rayonnements, Structure (NEEL - MRS) |
| Rok vydání: | 2018 |
| Předmět: |
Nanowire
FOS: Physical sciences Physics::Optics Photodetector Bioengineering Optical power Applied Physics (physics.app-ph) 02 engineering and technology 01 natural sciences Condensed Matter::Materials Science Electric field Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences General Materials Science Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS 010302 applied physics Physics Photocurrent Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics business.industry Mechanical Engineering Materials Science (cond-mat.mtrl-sci) Linearity Heterojunction Physics - Applied Physics General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Flexible electronics Mechanics of Materials [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology business |
| Zdroj: | Nanotechnology Nanotechnology, Institute of Physics, 2018, 29 (25), pp.255204. ⟨10.1088/1361-6528/aab838⟩ Nanotechnology, 2018, 29 (25), pp.255204. ⟨10.1088/1361-6528/aab838⟩ |
| ISSN: | 1361-6528 0957-4484 |
| Popis: | Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination. This is the accepted manuscript version of an article that appeared in Nanotechnology. The CC BY-NC-ND 3.0 license applies, see https://creativecommons.org/licences/by-nc-nd/3.0 |
| Databáze: | OpenAIRE |
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